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Single and multi-voids position effects will be highlighted from an electrothermal viewpoint. Complementary numerical investigations will show that these effects are strongly dependent on the properties of the backside metallization of the MOSFET chip. The methodology based on a coupled analysis of electrothermal modeling and experiments that led to these conclusions will be detailed.
Robustness of IGBT transistors under repetitive short-circuit conditions is an important requirement. Short-circuit is one of the most severe stress conditions on IGBTs since a large current flows through the device while supporting whole supply voltage. In this paper, experimental results concerning the ageing of 600 V IGBT under repetitive short circuit operations are presented. A critical energy,...
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