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Polarizations in GaN surfaces are visualized using laser terahertz emission microscopy (LTEM). A non-radiative-inversion domain that is hardly distinguishable with photoluminescence imaging was observed with this method. The present study demonstrates that LTEM provides rich information about the surface polar states in GaN, which is crucial to improve the performance of GaN-based optoelectronic and...
We observed terahertz (THz) emissions form multi junction tandem solar cells while changing the wavelength of the excitation laser and could obtain THz images of individual subcells deep inside the tandem solar cells.
Terahertz emission from a Si metal-oxide-semiconductor (MOS) structure with transparent indium tin oxide electrodes was measured using a Laser Terahertz Emission Microscope (LTEM) with time-domain spectroscopy technique. The THz waveform and amplitude at various external voltage were compared with the capacitance-voltage characteristics. The observed peak amplitude strongly correlated with the surface...
We observed photoexcited carrier responses in solar cells excited by femtosecond laser pulses with spatial and temporal resolution using an optical pump-terahertz emission probe technique. We visualized the ultrafast local variation of the intensity of terahertz emission from a polycrystalline silicon solar cell using this technique and clearly observed the change in signals between a grain boundary...
The enhancement of terahertz emission from a GaN wafer induced by Ga vacancy-related defects was observed. This phenomena can be explained by the change of the band bending at these defects.
We observed waveforms and images of THz radiations from a triple-junction-solar-cell (TJSC) with InGaP-GaAs-Ge layered structure excited by wavelength-tunable laser pulses, and wavelength-dependent THz signals and images could be observed. The results indicate that characteristics of an each layer in TJSC can be extracted with this system.
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