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This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW/√Hz and the emitted power in the range of 100 μW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise...
We report on the photoresponse of 0.7-μm InP double heterojunction bipolar transistor to THz radiation of low and high intensities, when the collector is unbiased. At low intensities, the photoresponse is linear in radiation intensity. Under intense laser radiation, we observe a saturation at intensities > 15 kW/cm2, sample damaging arising around ∼ 40 kW/cm2. The photoresponse as a function of...
An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular, the research on the dynamic range of these detectors is described and two different technologies GaAs and GaN are compared. As a conclusion, we will show first real world applications of the plasma field effect transistors based THz detectors: demonstrators...
We present results of investigations of Plasma Assisted Molecular Beam Epitaxy (PAMBE) - grown GaN/AlGaN High Electron Mobility Transistor (HEMT) structures for fabrication of detectors and emitters operating in THz spectral range. These devices are standard HEMT structures but equipped with additional antennas that ensure THz radiation coupling. THz detectors and emitters were processed using different...
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm2 was studied InGaAs high electron mobility transistors. The observed signal saturation behavior is explained by analogy with current saturation in standard direct currents output characteristics. The theoretical model of terahertz...
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