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The performance of the Trench Insulated Gate Bipolar Transistor is of special concern to the Smart Grid community. Here, a novel methodology for the quasi-static behavior of the device is introduced which is based on a firmly established law of classical thermodynamics, viz., the minimization of the Helmholtz Free Energy as a function of the internal fields, potential, and charge. The analysis begins...
Unquestionably, one of the most important developments in this century has been the avalanche advancement of Integrated Circuits technology incorporating solid state systems into areas never before imagined. Students face special challenges to understand these complex systems using conventional instructional methods. We here present a new pedagogical approach using the Variational Thermodynamic principle...
Finite Element modeling of the electrostatic behavior of semiconductor electronic devices has been a work-horse of top-level design for generations. Commercial off-the-shelf Finite Element code packages are readily available which afford the user convenient geometry options and post-processing tools. Recent effort at our Electron Devices Laboratory has been directed at approaching the problem from...
The Trench Insulated Gate Bipolar Transistor (TIGBT) is a device of great complexity consisting of a large number of interacting internal capacitances. It is imperative to understand these capacitances and interactions among them because of their direct implication in the device switching power loss and speed. Standard numerical modeling of the TIGBT using finite element (FE) methods is not completely...
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