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In this paper, a comparative study on the switching characteristics and power losses in GaN and SiC vertical junction field effect transistors (VJFETs) is presented. Models of VJFETs based on GaN and SiC, were separately built in Sivaco ATLAS and applied to a mixedmode device/circuit simulator for dynamic evaluation under identical test conditions. The device figure of merit (RonQg) of GaN VJFET is...
The focus of this paper is to understand the impact of the material properties of GaN, exploited using a vertical device, in power switching by estimating switching loss. The study was performed with a cascoded current aperture vertical electron transistor (CAVET). The normally OFF device was simulated and analyzed using a Silvaco ATLAS 2-D drift diffusion model integrated to SPICE-based circuit simulator...
A cascoded GaN Current Aperture Vertical Electron Transistor (CAVET), which incorporates a normally off low-voltage Si MOSFET at the input and a normally on high-voltage GaN CAVET at the output in a cascode form, has been simulated and analyzed using a device/circuit hybrid simulator implemented in Silvaco ATLAS. The hybrid simulator was achieved by integrating the Silvaco ATLAS based 2D drift-diffusion...
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