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A silicon-on-insulator (SoI)-like bulk silicon (SLBS) MOSFET structure is studied and compared against a fully depleted (FD) SoI MOSFET using 2-D numerical simulations. A p/n−/p+ structure was contained in SLBS device, in which n− is made of 4H-SiC. This n− layer is FD. Hot carrier (HC) effects (HCEs) in proposed SLBS nMOSFET were simulated and compared with that in FD SoI nMOSFET. In this paper,...
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