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Freestanding circular GaN gratings are fabricated on a GaN-on-silicon substrate, and epitaxial growth of GaN is subsequently conducted on the prepared GaN template by molecular beam epitaxy growth. With the assistance of circular GaN gratings, the surface diffusion is improved and thus, the selective growth of GaN takes place. Epitaxial circular gratings with InGaN/GaN multiple quantum wells are generated...
We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, HfO2 film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, HfO2 film...
Periodic Si pillars were fabricated by Si-micromachining and unique flower-structured InGaN/GaN quantum-well nanodick crystals were deposited on the Si pillars. Split photoluminescence peak positions indicated stronger emission from the high In included quantum dots, as compared with the emission from the quantum-well matrix layers. Optical microscopy images indicate clear vertical and horizontal...
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