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Periodic Si pillars were fabricated by Si-micromachining and unique flower-structured InGaN/GaN quantum-well nanodick crystals were deposited on the Si pillars. Split photoluminescence peak positions indicated stronger emission from the high In included quantum dots, as compared with the emission from the quantum-well matrix layers. Optical microscopy images indicate clear vertical and horizontal photoluminescence distributions of the flower structure on the pillared Si substrate.