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We have demonstrated flexible thermoelectric generators (TEGs) using transverse type structure with amorphous InGaZnO/Mo and amorphous InGaZnO/ITO materials. The amorphous-InGaZnO (a-IGZO) film has advantages such as its low thermal conductivity and relatively high carrier mobility. Additionally, the a-IGZO film can form on a flexible substrate using a low temperature fabrication process. The a-IGZO...
InGaZnO (IGZO) nanowires were synthesized via bimetal-catalyzed VLS growth process from amorphous InGaZnO thin film. Amorphous IGZO thin film was initially deposited, followed by the thin film deposition of metal catalysts (Mo and Au). Annealing was then performed at 700°C under pure N2 atmosphere under three different time periods (0.5 h, 1 h and 2 h) to observe the effect of annealing time on the...
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