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We for the first time evaluate the 3-nm gate Length (LG=3nm) inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode Silicon bulk FinFET performance with optimized nano-fin structure (FW=FH=3nm) using 3-D quantum transport device simulation. The excellent electrical characteristics of LG=3nm Si bulk FinFET are reported. The sub threshold slope values (SS∼65mV/dec.) and drain-induced...
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