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We report on the small-signal high frequency characteristics of highly scaled graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency (${f}_{T}$ ) and maximum oscillation frequency (${f}_{\textsf {max}}$ ) profiles as a function of current density or gate bias. The device design includes upward and downward Al composition grading...
We investigate Al2O3/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages...
We report on accurate modeling of GaN HEMTs for RF operation taking into account sheet charge density (ns) dependence of electron velocity in 2-dimensional electron gases (2DEGs). Electron velocity characteristics of the channel directly impact DC and high frequency transistor performance, and it is critical to understand velocity at all charge density and field conditions to accurately predict large...
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