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We have analyzed Hall effect in a thin-film transistor by actual experiments and device simulation. Particularly in this presentation, we show the sensitivity dependence on the applied voltage. These behaviors can be explained by the electric field in the channel layer for the operation regions. Additionally, the carrier mobilities and densities calculated using transistor equation and Hall effect...
We have analyzed the Hall effect in a thin-film transistor. First, we investigated the dependence of the Hall voltage on the gate voltage. In the subthreshold region, a relatively large Hall voltage is generated regardless of the magnetic field. This is due to the zigzag path of the current flow. In the saturation region, as the gate voltage increases, the Hall voltage also increases, which is dependent...
We fabricated a p-type poly-Si thin-film transistor with Hall terminals and evaluated the Hall voltage by applying gate voltage, drain voltage, and magnetic field. We found that the Hall voltage is dependent on the magnetic field when the gate voltage is beyond a threshold voltage.
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
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