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A comparison of the noise behavior of Double-Gate and Standard High Electron Mobility Transistors is established by means of Monte Carlo simulations. The intrinsic noise P, R, and C parameters are only moderately improved in the DG-device, but the extrinsic minimum noise figure NFmin reveals a significantly better extrinsic noise performance, more noticeable for higher frequencies due to the better...
The static and dynamic behavior of InAlAs/InGaAs double-gate high-electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2-D Monte Carlo simulator. The model allows us to satisfactorily reproduce the experimental performance of this novel device and to go deeply into its physical behavior. A complete comparison between DG and similar standard HEMTs has been performed, and devices...
The intrinsic static and dynamic performance of InAlAs/InGaAs double-gate high electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2D Monte Carlo simulator. Our model allows going deeply into the physical behavior of this novel device in comparison with similar standard HEMTs. Different gate lengths are analyzed in order to check the attenuation of short-channel effects expected...
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