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The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n+)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy methods are presented. The temperature dependence of the capacitance–voltage characteristics of the HIT structure and deep-energy-level parameters are...
The paper discusses the basic principles and implementation of laboratory complexes to realize methods for investigating properties of materials and structures for solid state electronics and nanoelectronics. The following laboratory complexes are developed: studying resistance of solid dielectrics; thermal analysis of metal alloys; analysis of spectra of deep levels using DLTS method. Virtual laboratory...
In this work a P3HT-based polymer solar cells are investigated by complex combination of experimental electrophysical methods. The existence of the high value deep levels is determined. Influence of these centers on the solar cell performance is shown.
Automated measuring complex for local research of capacitor-voltage characteristics of semiconductor structures based on the probe system of an atomic force microscope has been developed. The research of electric properties of semiconductor structure with modified surface relief used while producing silicon based solar cells has been made.
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