The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper develops an effective electrostatic discharge (ESD) protection solution for GaAs-based integrated circuits based on a novel multi-gate pHEMT. With approximately the same layout area, the proposed ESD protection clamp can carry an ESD current three times higher than the conventional single-gate pHEMT clamp under the human body model (HBM) stress. Moreover, the new ESD clamp shows promising...
Electrostatic discharge (ESD) protection structures in the GaAs technology are commonly constructed using enhancement-mode single-gate (SG) pseudomorphic high-electron mobility transistor (pHEMT) devices. This paper develops an improved ESD protection clamp based on a novel multigate pHEMT. With approximately the same layout area, the proposed ESD protection clamp can carry an ESD current three times...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.