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This letter reports on a directly-modulated hybrid III-V/SOI DFB laser and a ring resonator integrated on a single chip. The ring resonator filter provides extinction ratio enhancement. A trade-off between power losses and performance improvement is found. Error free and penalty free transmission at 10 Gb/s over 50-km single mode fiber is demonstrated.
We demonstrate a tunable transmitter, integrating a III-V/Si laser and electro-absorption modulator. This transmitter exhibits a 10nm wavelength tunability and shows error free transmission up to 50km at 10.3Gb/s.
Recent progress on hybrid integration of III–V on Silicon devices using wafer bonding is presented focusing on hybrid tunable lasers and their applications for the next generation of access, metropolitan and long haul optical networks.
We used the molecular wafer bonding technique to develop a hybrid widely tunable, monomode III-V/Si laser for wavelength division multiplexing, with a tunability over 35 nm and an output power in excess of 3 mW.
We achieve 10Gbit/s transmissions using NRZ direct modulation on a hybrid III-V on Silicon laser. The device is fabricated by wafer-scale molecular bonding and exhibits a bit error rate less than 10−4 up to 40km reach and a wavelength tunability over 35nm.
We present a hybrid III-V/silicon SOA, mounted in a planar package, with a fiber-to-fiber gain up to 10 dB, maximum internal gain of 28±2 dB, an internal noise figure of 10–11 dB and an output saturation power around 9 dBm.
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