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A physics-based analytical and compact device model for an enhancement-mode gallium nitride gate injection transistor is presented in this work. The model is implemented in Saber® using MAST hardware description language (HDL). The physics-based model allows the user to extract the model parameters from the dc I-V and C-V characteristics that are readily available in the device datasheets. The classical...
A physics-based compact gallium nitride power semiconductor device model is presented in this work, which is the first of its kind. The model derivation is based on the classical drift-diffusion model of carrier transport, which expresses the channel current as a function of device threshold voltage and externally applied electric fields. The model is implemented in the Saber® circuit simulator using...
A physics-based analytical compact device model for an enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) lateral power device structure is presented. The model was implemented in the Saber® simulator and the physics-based model parameters are specifically crafted so that they can easily be extracted from dc I-V and C-V data typically available in a datasheet. An 80 V,...
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