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In this letter, we have proposed a novel AlGaN/GaN FinFET featuring T-shaped gate and extremely linearity of transconductance characteristics ($\text{G}_{\mathrm {m}})$ . The formation of AlGaN/GaN nano-fins only in the gate opening region is enabled by a developed fabrication process, which is simple and well compatible with the conventional one. When normalized to effective channel width, the fabricated...
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