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In this letter, we have proposed a novel AlGaN/GaN FinFET featuring T-shaped gate and extremely linearity of transconductance characteristics ($\text{G}_{\mathrm {m}})$ . The formation of AlGaN/GaN nano-fins only in the gate opening region is enabled by a developed fabrication process, which is simple and well compatible with the conventional one. When normalized to effective channel width, the fabricated...
We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance Ron of 0.94 Ω•mm in the linear region,...
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