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DC power delivery system is becoming an attractive alternative in an AC dominant world due to its higher energy efficiency and better cable utilization. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection...
High voltage wide bandgap (WBG) semiconductor devices like the 15kV SiC MOSFET have attracted great attentions because of its potential applications in high voltage and high frequency power converters. However, these devices are not commercially available at the moment and their high cost due to expensive material growth and fabrication may limit their widespread adoption in the future. In this paper,...
The newly proposed FREEDM-Pair is an ideal and economical solution to address high cost issue in high power SiC power devices. The FREEDM-Pair, in which a Si IGBT and a SiC JFET are connected in parallel, combines the advantages of SiC JFET's low switching losses and Si IGBT's superior forward conduction characteristics. One issue of the JFET based FREEDM-Pair is the incompatible gate drive voltage...
In order to better assist researchers to select the appropriate power device for medium voltage power electronics applications, this paper presents a comparative evaluation on three typical 6kV level Si and SiC power devices, including 6.5kV/25A Si IGBT from ABB, 6.5kV/15A normally off SiC JFET from USCi and a FREEDM System Center developed 6kV/26A SiC series-connected JFET. The 6.5kV Si IGBT and...
A novel IGBT structure with a built-in lateral JFET region is proposed to reduce the saturation current. A low saturation current level for high voltage IGBTs is desirable for strong short circuit capability. The saturation current can be reduced by increasing the cell pitch of the conventional IGBT structure at the sacrifice of increased on-state voltage drop. The proposed structure provides a greatly...
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