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Results of calculations of spatial distribution of nonequilibrium carriers in semiconductor heterostructures pumped by electron beam as well as the dependence of the threshold current density on the electron energy for lasers based on such structures are presented. It is shown that for minimization of the threshold current density at low (<10keV) energies of electrons, the active layer (quantum...
It has been demonstrated that after 3 – 5 minutes irradiation of the MBE grown ZnSe-based electron beam pumped laser heterostructures with the light intensity of mercury lamp of 40–60 W/cm2, the luminescence intensity increased by ∼20–50 %, whereas the threshold current density reduced by 20–40 %. Evidently, the results could be explained by the annealing (or optical transformation) the initial point...
The parameters of electron beam pumped RT lasers based on ZnSe-containing MQW structures were studied. Maximum value of output pulse power as high as 82W per laser facet has been demonstrated. Both the high value of Pmax and the threshold of catastrophic degradation in comparison with the earlier results could be explained by the relatively low level of defect density (∼104 cm−2) in the laser structure.
In the present paper we report on the results of studies of EBP lasers based on the CdSe/ZnSe QD structures with an ultra thin upper cladding layer. Usage of thin top claddings allows to obtain lasing at electron beam energy as low as 3.7 keV. The CdSe/ZnSe/ZnMgSSe laser structures were grown by molecular beam epitaxy (MBE) pseudomorphically on GaAs (001) substrates via a GaAs MBE buffer.
The plasmon dispersion in the periodically inhomogeneous media are considered. It is shown that effect of the crystalline potential leads to the negative dispersion of the long-wave plasmons and their attenuation at k=0.
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