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We demonstrate InP based evanescently-coupled p-i-n photodiodes heterogeneously integrated onto silicon-on-insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520–1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).
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