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A 64-unit Hall-effect sensor array capable of detecting magnetic beads is implemented in 0.18 µm CMOS process. Two Hall sensor implementations, one using n-wells and another using MOS transistors, are analyzed. The n-well implementation can detect a single 4.5 µm bead in .5 ms with a probability of error below 1% while the MOS implementation takes 2.5 ms to detect the same bead. Each array is compact...
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