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We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 µm to 1 µm, the HEMTs showed up to 56% higher maximum drain current, 23% higher peak transconductance and ƒT of 185 GHz (+32%). A trade-off in the lateral scaling is needed due to increased gate leakage...
A cryogenic wideband 4–8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared...
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