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The assessment of the dielectric behavior of thin Polyimide films submitted to high DC stress is investigated considering different characterization methods. Materials of interest are polyimide films of 11 to 16 μm in thickness deposited by spin coating on a silicon wafer. Comparison is made with structures with a thin SiO2 layer onto the substrate. The laser intensity modulation method appears suited...
Polyimides (PI) are used in microelectronics mainly as insulating and passivating layers. In these applications space charge-related processes such as conduction, field distortion and ageing phenomena are important to consider for reliability and failure purpose. It is therefore of great interest to estimate these distributions in order to optimize PI-containing structures and designs. However, no...
A new criterion allowing for the choice of the most appropriate substrate for high voltage high temperature power electronics applications is introduced. Different insulating materials (A1N, Alumina and BN) are tested up to 450degC regarding their dielectric strength. These results are presented and discussed.
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