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MIS structures using HfO2 and HIZO layers, both deposited by room temperature RF magnetron sputtering are fabricated for TFTs application and characterized using capacitance-voltage. The relative dielectric constant obtained at 1kHz was 11, the charge carrier concentration of the HIZO was in the range of (2–3)×1018cm−3 and the interface trap density at flat band was smaller than 2×1012cm−2. The critical...
Bias stress study is presented in Metal-Insulator-Semiconductor structure using Indium-Gallium-Zinc oxide film on top of HfO2, deposited by pulsed laser deposition and atomic layer deposition, respectively. The produced effect on this interface is analyzed through hysteresis measurements at different bias conditions for several periods of time.
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