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Bias stress study is presented in Metal-Insulator-Semiconductor structure using Indium-Gallium-Zinc oxide film on top of HfO2, deposited by pulsed laser deposition and atomic layer deposition, respectively. The produced effect on this interface is analyzed through hysteresis measurements at different bias conditions for several periods of time.
The gate leakage current present in double-gate fully depleted fin-shaped MOSFETs with metal gate/single oxynitride layer is modeled. It can significantly contribute to the drive current measured in different conditions, according to its dependence on applied voltages to the structure electrodes, as well as, on the Si regions where the gate has control. Direct tunneling of electrons from inverted...
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