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The chemistry of dicationic diboranes with two BII atoms that are engaged in direct B−B bonding is by enlarge unexplored, although these molecules have intriguing properties due to their combined Lewis acidic and electron‐donor properties. Unsymmetric dicationic diboranes are extremely rare, but especially attractive due to their polarized B−B bond. In this work we report the directed synthesis of...
This paper presents an overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules. It adapts the existing desaturation detection (= UCE,desat method) known from IGBTs. These adjustments include separate detection paths for hard switching faults (HSF) and fault under load (FUL) as well as overcurrent. The necessity of a junction temperature compensation for detecting each...
In this paper different gate drive concepts to eliminate parasitic turn-on for SiC MOSFETs are discussed. Experimental results show a potential for lowering switching losses of SiC MOSFETs during fast switching operation, reduction of turn-off overvoltage across the bodydiode. Finally increased requirement on the gate drive unit are discussed.
This paper analyzes the influence of the threshold voltage on the parallel connection of three phases of a high power SiC MOSFET module. The current mismatch and the resulting switching loss distribution between paralleled phases will be investigated. Two different gate-drive circuit concepts will be tested. The influence of the choice of the gate-resistor arrangement will be presented regarding the...
This paper researches the performance benefits of replacing the Si IGBTs and diodes in a power module for automotive drives with either 650 V or 900 V SiC MOSFETs. Evaluating the mean conduction and switching losses in a load profile allows a comparison of both voltage classes in order to show which class offers the lower overall losses in the given application. Furthermore, the influence on the switching...
In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods...
In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET. The switching losses of these three combinations are analysed to find the best combination of MOSFET...
In this paper the difference in switching characteristic and switching losses together with the effects of parasitic elements between silicon and silicon-carbide devices on the loss distribution are reviewed. A comparison between a standard silicon IGBT module and a Full SiC MOSFET module is being made on the basis of equal voltage overshoot and maximum switching speed of both devices. Potentials...
Volume and weight of the propulsion equipment of a traction drive are most important features to provide more efficient transportation in the future. It will be shown how the converter technology for traction drives has improved its performance in the past decades and new developments are presented promising a further increase in power density. The machine and corresponding gear and suspension system...
In this paper the main advantages of 6.5 kV Reverse Conducting IGBTs (RC-IGBTs) compared to state-of-the-art two-chip IGBT/Diode solutions for traction applications are discussed. The experimental results show the potential of RC-IGBTs as well as the increased requirements on the gate control strategy.
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