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Using an advanced simulation framework we analyze a recent sub-10 nm technology demonstration based on stacked nanowire transistors (NW-FETs). The study encompasses (i) topography simulation which realistically reproduces the fabricated device, (ii) device simulation based on the subband Boltzmann transport equation (iii) a comprehensive set of scattering models for the gate stack, (iv) physical models...
In this work, the distribution, execution and performance of TCAD simulations on grid and cloud systems are investigated. A module for distributed computing which can uniformly interface both grid and cloud computing systems has been implemented within GTS Framework. Automated allocation of resources for user jobs on a combined platform has been achieved. Traditional grid-computing systems are compared...
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