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Graphene/hexagonal boron nitride (h-BN) was characterized. Field emission from graphene/h-BN/Si structure showed low threshold voltage and enhanced emission current. Fowler-Nordheim (F-N) plots were applied to discuss the obtained field emission properties. We also examined work function using ultraviolet photoelectron spectroscopy (UPS). The obtained data suggested that graphene modified work function...
In this paper, nanocrystalline Si MOS cathodes are fabricated by laser ablation technique. This is the first step to understand the emission mechanism of nanocrystalline-based cathodes because the technique is appropriate for fabricating nanocrystalline Si covered with a thin oxide layer. Results show that electron emission occurred nearly at a gate voltage of 6 V, which is as low as the work function...
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