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We report field emission properties of gated p-type silicon field emitter arrays with submicron gate aperture induced by laser pulses. Polarization dependent photoemission is observed and the current shows linear dependence on laser power. The results indicate that the current pulses from our devices are created by photo-field emission process dominantly.
Volcano-structured p-type silicon field emitter arrays have been fabricated by etch-back technique and investigated the photoresponse characteristics of electron emission excited by laser pulses. We have observed the current pulses from the device with the same response of the laser pulse.
Photoassisted electron emission from p-type silicon field emitter array with sub-micron gate aperture under illumination of blue laser pulses is investigated. The FEA device is designed to minimize the photogeneration of slow electrons outside the depletion layer. We present the optical response studies of the device by laser pulses.
We have studied the photoassisted electron emission from a p-type silicon field emitter array under illumination of laser lights with 633 nm and 405 nm wavelengths. The increase of the emission current under light illumination is proportional to the emission current in the dark. The significant influence of the polarization in photoassisted emission for each wavelength was not observed.
The photoresponse of electron emission from metal-oxide-semiconductor (MOS) cathodes based on nanocrystalline silicon is experimentally studied for optically generating a train of short electron bunches. Nanocrystalline silicon film was prepared by pulsed laser ablation using an Nd:YAG laser with the fourth harmonic (266 nm). We obtained a pulsed electron beam from the cathode device modulated by...
The enhancement of electron emission by laser illumination of a metal-oxide-semiconductor (MOS) cathode based on nanocrystalline silicon was investigated. An increase of the emission current under blue laser irradiation was proportional to the incident laser power. The influence of light modulation on the emission current was also investigated. We have obtained a modulated electron beam by laser pulses.
Optically pulsed modulation of a nanocrystalline silicon based silicon metal-oxide-semiconductor cathode fabricated on p-type silicon has been studied using a He-Ne laser mechanically chopped When shining a MOS cathode, the emission current was quickly responded to on-off of the laser. In addition, the energy distributions of emitted electrons were measured
Enhancement of electron emission by illumination of a metal-oxide-semiconductor (MOS)-type cathode based on nanocrystalline silicon has been studied using a He-Ne laser. Heavily doped p-type silicon was used as a substrate and the laser was irradiated on the gate with oblique incidence. The emission current was enhanced under illumination and quickly responded to on-off of the laser. In addition,...
In this paper, nanocrystalline Si MOS cathodes are fabricated by laser ablation technique. This is the first step to understand the emission mechanism of nanocrystalline-based cathodes because the technique is appropriate for fabricating nanocrystalline Si covered with a thin oxide layer. Results show that electron emission occurred nearly at a gate voltage of 6 V, which is as low as the work function...
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