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Effects of etch stop layer (ESL) deposition conditions on stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) were investigated. The performances of the a-IGZO TFTs were varied depending on the flow rate of SiH4/N2O in chemical vapor deposition (CVD) of ESL. The threshold voltage shift after positive bias thermal stress test was decreased with increasing the flow rate...
The physical properties of amorphous In-Ga-Zn-O (a-IGZO) films deposited by DC sputtering with various sputtering pressure were investigated. In accordance with improvement of the transistor performances such as saturation mobility (μSAT) and sub-threshold swing with a lowering the sputter pressure, we found that the sputtering pressure affected various physical properties of a-IGZO film. The lower...
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