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Experimental data is presented demonstrating 100GbE (4×25.8 Gbps) SWDM4 VCSEL technology, and SWDM4 transmission over 200m and 300m of wideband OM4 fibers. All NRZ SWDM4 channels achieved error-free transmission at 200m, and BER < 1e-9 at 300m. In addition, successful 180 (4×45) Gbps transmission is demonstrated over 300m wideband OM4 fibers using a 45-Gbps-PAM4 chip. Real time BERs < 2e-4 were...
Successful 180 (4×45) Gbps transmission is demonstrated over OM4 fibres using a 45-Gbps-PAM4 chip. Real time BERs<2e-4 were achieved for four SWDM grid channels in the 850–950nm wavelength range over 100m/200m/300m of wideband OM4 fibres.
Experimental data is presented demonstrating 100GbE (4 × 25.8 Gb/s) SWDM4 VCSEL technology, and SWDM4 transmission over 200m and 300m of wideband OM4 fiber. All SWDM4 channels achieve error free transmission at 200m, and BER < 1.e-9 at 300m.
To meet advancing market demands, microprocessor embedded memory applications require denser and faster memory arrays with each process generation. Recent work presented an 18.5 ns 128 Mb DRAM with a floating body cell for conventional DRAM products and a 4 Mb memory macro using a memory cell built with two floating body transistors. This paper presents a floating-body Z-RAMreg memory cell to fabricate...
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