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This paper presents a broadband frequency doubler chip working in the WR-03 band (220–325 GHz). The chip is implemented in a 130-nm SiGe BiCMOS technology with an of 250/300 GHz. It consists of an integrated high-gain wideband amplifier to drive the frequency doubler. The doubler is based on a cascode push-push topology. Conversion loss of the doubler is reduced by utilizing an inductive feedback...
This letter presents the design of a 160 GHz cascode based differential power amplifier (PA) realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output power stage, providing a peak differential gain of 30 dB and a 3-dB small-signal bandwidth of around 50 GHz. Gain is enhanced by means of inductive positive feedback in the common-base stage. By using optimally sized...
A high-gain broadband power amplifier (PA) implemented in a 130-nm SiGe BiCMOS technology is presented. The architecture is based on a class-A four stage fully-differential cas-code amplifier. Each stage is directly matched to the subsequent stage, using a 4-reactance wide-band matching network. On-wafer characterization of the amplifier shows a peak differential gain of 24.8 dB with a 3-dB bandwidth...
Powered by the availability of large fractional bandwidth, several Gbps communication is now possible at mm-wave with simple modulation schemes. Generation of high gain in a wide bandwidth is challenging as bandwidth usually trades-off with gain. This work presents the design of a high GBW E-band LNA in 130nm SiGe BiCMOS technology. Common emitter stages are stacked in a current-sharing configuration...
A D-Band downconverter implemented in a 130-nm SiGe BiCMOS technology is presented. The mixer is based on a double-balanced Gilbert cell topology with emitter-follower based output IF buffers. The chip includes an integrated 3-stage LO buffer and RF/LO LC-baluns for single-ended on-wafer measurements. Measurements show a peak conversion gain (CG) of 11 dB at 170 GHz, and an input-referred 1 dB compression...
A modified version of the Marchand balun based on three folded symmetric coupled lines is presented in this paper. The S-parameters of a quasi-TEM coupler are derived in the case when even- and odd- mode phase velocities are unequal. The effects on the performance of the Marchand balun are then investigated by analyzing its calculated S-paramaters under different phase-velocity-ratios of both the...
In this paper the design and measurements of a single-ended and a fully differential broadband amplifier are presented. The amplifiers are based on a lumped circuit design topology and are highly compact with an active chip area of around 0.02mm2. The amplifiers are fabricated in a 0.13-µm SiGe BiCMOS HBT technology. Wide bandwidth is achieved with a common-base input stage and an output cascode stage...
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