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Gallium nitride (GaN) transistors, first introduced in the 1990s, have become key building blocks for many commercial and military electronics systems. The high radio frequency (RF) power generating capability of GaN is one of its most attractive features, but if they are not properly thermally managed, severe RF performance degradation can occur, such as reduced gain, reduced output power, and lower...
This paper presents the results of an experimental investigation into the impact of microfluidic cooling on the performance of high power Gallium Nitride (GaN) amplifiers (HPAs). Electrical and thermal measurements were taken on a high frequency, broadband HPA, cooled using two different thermal management techniques; “conventional” (or remote) cooling where the chip is separated from its heat sink...
A computer model of a buck switching regulator has been developed without any approximation that would limit its use to small signal perturbations and small load changes. The model can show the regulator's responses to a wide variety of disturbances. The regulator's transient and steady state responses to these disturbances can then be optimized by varying the voltage and current gains and/or including...
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