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We report a notable improvement in performance, electron transport, and reliability of HfO2/In0.53Ga0.47As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH3 postremote plasma treatment (PRPT). The interface state density $D_{{\mathrm {it}}}$ decreased by approximately one order of magnitude from $6.1 \times 10^{{\mathrm {12}}}$ to $4 \times 10^{{\mathrm {11}}}$ ...
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