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We investigate the effects of guard-ring structure on noise characteristics for CMOS-compatible single-photon avalanche diodes (SPADs). SPADs with different guard-ring structures are fabricated in standard 0.18-μm CMOS technology and the noise characteristics as dark current, dark-count rate and afterpulsing probability are measured and analyzed.
Above-IC graphene NEMS (gNEMS) switch electrostatic discharge (ESD) protection structures are designed to replace traditional in-Si PN-based ESD structures. Built in CMOS back-end without PN junctions, gNEMS eliminates ESD-induced parasitics (leakage, capacitance, noise) inherent to PN junctions. Transient characterization of gNEMS ESD structures were conducted by transmission line pulsing (TLP) measurement...
This paper outlines the co-design and simulation of the photonics and electronics circuits for an optical modulator implementing a 4-level phase amplitude modulation scheme at 64 Gb/s. The photonics circuit is designed for an SOI process with a 300 nm top Si layer and is based on a Mach-Zehnder Interferometer architecture modulator using carrier depletion. The CMOS driver circuit employs two on-chip...
In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device's driving capability and sub-threshold swing, but makes...
One of the most critical reliability problems that the LED COBs are facing is the failure of wire bonding connections. The LED COBs would easily break down due to the mechanical shocks or material stress on the gold wire in conventional package roadmaps. Flip chip technologies are excellent options for solving this problem. This paper has been focused on the challenges during the design and manufacturing...
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