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A cost competitive 20nm technology node is described that enabled industry-first 20nm cellular modem chip with 2× peak data rates vs 28nm, and 2× carrier aggregation. Process and design enhancements for layout context optimization, and continuous process improvements resulted in 18% boost in circuit performance while simultaneously achieving >30% power reduction. 3 mask local interconnect and 64nm...
Replacement metal gate (RMG) process requires gate fill with low resistance materials on top of work function tuning metals. Conventional titanium (Ti)-aluminum (Al) based RMG metal fill scheme for low resistance gate formation becomes challenging with further gate length scaling for 20nm node and beyond. In this work, we have demonstrated competitive low resistance gate formation at smaller than...
In this paper, we present a high performance planar 20nm CMOS bulk technology for low power mobile (LPM) computing applications featuring an advanced high-k metal gate (HKMG) process, strain engineering, 64nm metal pitch & ULK dielectrics. Compared with 28nm low power technology, it offers 0.55X density scaling and enables significant frequency improvement at lower standby power. Device drive...
Multi-head stretch forming(MHSF) is a new flexible technology for manufacturing sheet metal, and its multiple adjustable grippers substitute for integral structure grippers in the traditional stretch forming, it has the characteristics that these grippers can real-time adjust displacement and rotation according to variety of die curvature. The MHSF forming principle is introduced and corresponding...
For the first time, we have demonstrated a 32 nm high-k/metal gate (HK-MG) low power CMOS platform technology with low standby leakage transistors and functional high-density SRAM with a cell size of 0.157 mum2. Record NMOS/PMOS drive currents of 1000/575 muA/mum, respectively, have been achieved at 1 nA/mum off-current and 1.1 V Vdd with a low cost process. With this high performance transistor,...
InxGa1-xN and InxAl1-xN alloys are grown via MBE on sapphire substrates. A hole concentration of 7.7×1017 cm−3 is achieved on Mg-doped In0.04Ga0.96N. When x≫0.11, the Hall samples exhibit strong n-type polarity, whereas p-type polarity is confirmed by hot probe measurement for all Mg-doped InGaN and InAlN samples. Single p-i-n junction solar cells made of the same InxGa1-xN alloy composition are developed...
The band gap energies of the In1−xAlxN alloys are continuously tunable across the solar spectrum, making them good candidates for high efficiency solar cells. In particular, multijunction solar cells could be fabricated entirely from different compositions of this one alloy system. From modeling experimental measurements of the optical absorption coefficient in alloys with 0 ≤ × ≤ 0.6, a band gap...
High dose Ge+ ions were implanted into SIMOX substrates to synthesize SiGe alloys. These samples were evaluated by using RBS channeling and XTEM. The dose of implanted Get effects strongly the density of defects remaining in the surface SiGe layer. At a dose of 1.6??1016 Ge+ cm??2, SiGe layer with a very good crystallinity could be achieved through annealing at 950??C for 1h.
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