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This paper investigates substrate biasing effects in a monolithically-integrated half-bridge stage rated for 600 V/20 A and fabricated in a lateral AlGaN/GaN-on-Si technology. On-resistance degradation effects caused by the common substrate potential are analyzed and explained for the monolithic half-bridge stage operating in a 400 V-synchronous buck converter. The detailed analysis of an ungated...
This paper presents switching operation of a monolithically integrated half-bridge stage in a 600 V-class GaN-on-Si technology. The integrated power chip includes two high performance GaN-HEMTs with integrated freewheeling Schottky diodes, on a total chip area of 4×4 mm2. Operation of the half-bridge chip is demonstrated in a soft-switching buck converter at switching frequencies up to 3 MHz, input...
This paper describes three driver options for integrated half-bridge power stage using depletion-mode GaN-on-SiC 0.15µm RF process: an active pull-up driver, a bootstrapped driver, and a modified active pull-up driver. The approaches are evaluated and compared in 5 W, 20 V synchronous Buck converter prototypes operating at 100 MHz switching frequency over a wide range of operating points. Measured...
GaN high electron mobility transistors (HEMTs) are well suited for high-frequency operation due to their lower on resistance and device capacitance compared with traditional silicon devices. When grown on silicon carbide, GaN HEMTs can also achieve very high power density due to the enhanced power handling capabilities of the substrate. As a result, GaN-on-SiC HEMTs are increasingly popular in radio-frequency...
GaN-on-SiC technology has been widely used in radiofrequency (RF) power amplifiers to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate and very high transition frequencies of GaN High Electron Mobility Transistors (HEMTs). Along with other well-known advantages of GaN, such as high breakdown voltage and high temperature...
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