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As design rules shrink, semiconductor manufacturing becomes more complex which leads to a huge increase in the defects which could cause a non-yielding die. Process control and inline defect analysis becomes widely relevant to help shorten the learning process from R&D to production. This paper discusses the various methodologies which leverage patterned wafer inspection tools to help analyze...
As dimension of middle-of-line contacts scale down, the Tungsten (W) gap-fill capability is critical, and we starts to see function failure in SRAM and logic circuit caused by W-voids. We had observed that formation of W-voids is related to the contact profile, nucleation/barrier on sidewall, and deposition methods. Furthermore, even those initially "good" W-plugs are formed, the subsequent...
We systematically analyzed that the "dark gate" defects were detected by bright field inspection and e-beam as one of the top yield limiters (i.e. the defects of gate-to-contact shorts/leakage) and correlated to physical failure modes in multiple steps through RMG and MOL process steps. A few effective/novel solutions in process steps are successfully demonstrated with planar CMOS technology,...
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