The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper is devoted to the development and creation of sensor elements technology based on the silicon-on-insulator (SOI) structures. A comprehensive study of electrical properties of silicon-on-insulator structures over a wide temperature range (4,2–300K) is fulfilled. A highly sensitive strain, temperature, acceleration sensors are proposed, which is important for modern cryoelectronics, cryoenergetics,...
This paper is devoted to the architecture development, layout design, device-technological and circuit-topological computer simulation of elements based on single-level and multilevel silicon-on-insulator (SOI) structures, which can be the basis for creating components of analytical and sensory microsystem-on-chip. The architecture and layouts of analytical microsystem-on-chip were developed. Optimized...
The structure of sensor images on “silicon-oninsulator” local structures is proposed and possibility of monolithic integration of sensing elements and signal processing systems is shown.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.