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In this paper, the design and characterization of a broadband image reject mixer for the next generation of point to-point microwave links is presented. The manufacturing has been made in a commercially available 0.15 mum gate length GaAs mHEMT technology. The measured performance demonstrates a conversion loss of 9 dB and an image rejection ratio of 25 dB on average across the full E-band (71-76...
In this article, two class D-1 amplifiers is presented, both implemented with GaN MESFETs and working around 900 MHz, delivering 20.7/51.1 W output power with 75/78% peak drain-efficiency. A simple nonlinear model optimized for switched mode operation is developed from basic device data, and is used to predict intrinsic current and voltage waveforms during the design process. In general, very good...
In this article, two class D-1 amplifiers is presented, both implemented with GaN MESFETs and working around 900 MHz, delivering 20.7/51.1 W output power with 75/78 % peak drain-efficiency. A simple nonlinear model optimized for switched mode operation is developed from basic device data, and is used to predict intrinsic current and voltage waveforms during the design process. In general, very good...
We present simulations, fabrication and analysis of 4H-SiC RF power MOSFETs. We obtain an extrinsic transition frequency of 11.2 GHz and an /max = 11.9 GHz, a breakdown voltage above 200 V and an output power of 1.9 W/mm at 3 GHz. The measured devices are double fingered, source-gate-drain-gate-source with 2times0.4 mm total gate width and the nominal channel length of the devices is 0.5 mum. To the...
The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and to provide a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
A general purpose LS model for GaN and SiC FET devices was developed and evaluated with DC, S, and large signal measurements (LS). The FET model is generalized and extended with new feature in order to improve the management of harmonics, provide a more physical treatment of the dispersion as well as delay and model other specific effects in these devices. The model was implemented in a commercial...
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