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InGaAsSb and GaSb iliei mophotovoltaic cells were grown lattice-matched to GaSb substrates epitaxially by the Molecular Beam Epitaxy (MBE) method and fabricated nou-epitaxially using iou-implaniaiiou. TPV cells with 1 × 1 cm dimensions were fabricated. External quantum efficiencies and device characteristics including open circuit voltage, short circuit current density, ideality factor and reverse...