The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper reports modeling and simulation of polysilicon piezoresistors as sensing mechanism using commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The CMOS-MEMS resonator is designed to detect change in mass. The designed piezoresistors are composed of two types; longitudinal and transverse. CMOS polysilicon thin film is used as the piezoresistive sensing material. The...
This research studies longitudinal and transverse polysilicon resistors deposited in the maximum stress points of a CMOS-MEMS resonator for mass detection. The longitudinally mounted resistors were found to increase with the stress and giving maximum of resistance change of 10 to 23 O when the actuation voltage was varied from 50 to 180 V, while the transverse resistors were found to decrease from...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.