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Thick electroplated Cu bond-pads have recently been shown to allow for heavy Cu wire-bonding on silicon power devices. The Cu surface oxides present on these pads are a major concern for the bonding process and for a sufficiently stable bond formation. They currently have to be removed after the die-attach and prior to wire-bonding. To avoid such removal, the application of a thin Al coating on the...
Thick electroplated Cu bond pads have lately been demonstrated to enable heavy Cu wire-bonding but the Cu oxides necessitate an additional cleaning step after the die-attach. To avoid such cleaning, the use of a thin Al layer is tested for its passivating ability on Cu bond pads and its suitability for the bonding process. Results show a significant improvement of the oxidation resistance and bonding...
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