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Chemically deposited Zn(O,S) is one of the most promising materials replacing the commonly employed CdS buffer layer for Cu(In,Ga)(S,Se)2 solar cells. While yielding higher short-circuit currents, Zn(O,S) buffered cells commonly show initially low fill factors and open-circuit voltage. Different posttreatments (annealing, light-soaking) have to be employed to reach high efficiencies. In this paper,...
Sputtering of Zn(O,S) has emerged as an alternative technology for establishing the pn-junction for Cd-free chalcopyrite-based solar cells. Compared to the chemical bath deposition of CdS, this technology promises dry in-line fabrication of Cd-free modules with reduced complexity and cost. We will review the milestones of its development from fundamental investigations to scaling-up on large area...
Junction formation by chemical bath deposition of CdS is a well established and robust process. To avoid the well known drawbacks of this approach, we propose to omit the CdS buffer layer and to directly sputter a modified window layer where Zn(O, S) is used instead of ZnO to improve the band line-up. This could result in completely dry in-line manufacturing of Cd-free modules using only proven deposition...
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