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This simulation work studies whether band-to-band-tunneling leakage in short-channel germanium FinFETs and nanowires can be mitigated by the band gap widening resulting from quantum confinement. Through a combination of drift-diffusion and coupled Poisson-Schrödinger simulations, two possible solutions are investigated: can the BTBT rate be lowered sufficiently? Secondly, can the tunnel path be cut...
Channel hot-carrier (CHC) degradation in nMOS transistors is studied for different SiO2/HfSiON dielectric stacks and compared to SiO2. We show that, independent of the gate dielectric, in short-channel transistors, the substrate current peak (used as a measure for the highest degradation) is at VG = VD, whereas for longer channels, the maximum peak is near VG = VD/2. We demonstrate that this shift...
We present a study on the layout dependence of a SiGe S/D PMOSFET technology. While 65% increase in drive current is obtained for 45nm gate length transistors with large active areas, measurements and simulations show that this improvement may be seriously degraded when transistor dimensions, such as the source-drain length (L/sub s/d/) and the device width are further scaled. TDDB and NBTI measurements...
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