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The analytical noise model of HgCdTe focal plane array (FPA) pixel based on capacitive transimpedance amplifier (CTIA) is presented. It allows to evaluate the noise-equivalent power (NEP) and input dynamic range (IDR) of short-wavelength infrared HgCdTe FPA. The noise model takes into account the following noise mechanisms: photodiode shot noise due to fluctuations of the radiation flux and dark current,...
The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me−, maximum output pixel rate per one video output 20 MHz, maximum dissipation power < 100 mW.
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