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GaInAs/InP multi quantum wells light-emitting diode, emitting at 1.3-μm, was fabricated by metal organic vapor phase epitaxi on wafer bonded InP/Quartz substrate. The device has been operated under continuous wave operation at room temperature.
We demonstrated bonding of thin film InP and Si using wafer direct bonding technique and compared with bulk InP/Si bonded sample in terms of bonding strength and defect formation. Electrical conduction through the interface was also investigated.
We report here on the successful transfer of thin film InP epi-layer onto Si substrate using wafer direct bonding technique, to be used as a platform of GaInAsP system growth. Our approach is promising in terms of high density integration of InP-based several functional devices on Si substrate.
An ultrathin InP template with extremely low defect density was realized on Si substrate using wet etching and wafer direct bonding technique. On top of the InP/Si substrate, asymmetric SiO2 mask pattern on one side of the arrayed waveguides was prepared and selective metal‐organic vapor‐phase epitaxy (MOVPE) growth has been demonstrated. According to the cross‐sectional scanning electron micrograph...
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