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The effect of asymmetry in the structure parameters on the low temperature multisubband electron mobility in an inverted MODFET structure is analyzed. We obtain the subband energy levels and wave functions through selfconsistent solution of Schrodinger and Poisson's equations. We consider ionized impurity scattering, interface roughness scattering and alloy disorder scattering to calculate the electron...
The threshold voltage value is one of the most important fundamental electrical parameter in modeling MOSFETs, which is taken from either capacitance characteristics or drain current, using one or more transistors. The MOSFET threshold voltage value will influence digital systems in static and dynamic work regime. If the threshold voltage is shriveled, it is possible to maintain good performance of...
Low power design is gaining prominence due to the increasing need of battery operated portable devices with high computing capability. It is the critical issue in ASIC design, as featured size is scaled down. The reliability of integrated circuit depends on the heat dissipated in the circuit. A large fraction of the power consumed is due to the clock distribution network and the high switching activity...
In this paper, the intermittent fault detection in wireless sensor networks is formulated as an optimization problem and a recently introduced multiobjective swarm optimization (2LB-MOPSO) algorithm is used to find an optimum trade-off between detection accuracy and detection latency. Faulty sensor nodes are identified based on comparisons of sensed data between one-hop neighboring nodes. Time redundancy...
An architecture for a fast 32-bit floating point multiplier compliant with the single precision IEEE 754-2008 standard has been proposed in this paper. This design intends to make the multiplier faster by reducing the delay caused by the propagation of the carry by implementing adders having the least power delay constant. The implementation of the multiplier module has been done in a top down approach...
We have studied the suitability of nano-meter-scale InGaAs HEMTs as a high speed, low power logic technology for beyond CMOS applications. To this end, we have designed an enhancement-mode 90nm gate-length InGaAs HEMT with excellent logic figure of merit. The barrier and buffer materials are changed and their input and output characteristics are compared. The output current generated by the HEMT with...
The high electron mobility transistor (HEMT) is promising device for high power and high frequency application due to narrow band gap. The GaSb/AlGaAs HEMT is designed and optimized. The influence of two dimensional electron gas and electric field on device structure parameter is obtained from the self consistent solution basing on theory of semiconductor energy band and quantum well. The influence...
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